DG-MOSFET

 code:-

go atlas

set mat=sio2

set vdrain=1.0

mesh space.mult=1.0

#

x.m l=0.00   s=0.5

x.m l=0.07   s=0.001

x.m l=0.075  s=0.0005

x.m l=0.1    s=0.0005

x.m l=0.11   s=0.001

x.m l=0.175  s=0.5

#

y.m l= 0.0    s=.005

y.m l= 0.001  s=0.001

y.m l= 0.0025 s=0.0005

y.m l= 0.0125 s=0.0005

y.m l= 0.014  s=0.001

y.m l= 0.015  s=.005

#

region num=1 x.min=0 y.min =0 mat= air

region num=2 x.min=0.0 x.max=0.075 y.min=0.0025 y.max=0.0125 mat = silicon

region num=3 x.min=0.075 x.max=0.1 y.min=0.0025 y.max=0.0125 mat = silicon

region num=4 x.min=0.1 x.max=0.175 y.min=0.0025 y.max=0.0125 mat = silicon

region num=5 x.min=0.07 x.max=0.11 y.min= 0.001 y.max=0.0025 mat = $mat

region num=6 x.min=0.07 x.max=0.11 y.min= 0.0125 y.max=0.014 mat = $mat

#

electrode num=1 name= source x.min = 0 x.max=0 y.min=0.0025 y.max=0.0125

electrode num=2 name= drain x.min=0.175 x.max=0.175 y.min=0.0025 y.max=0.0125

electrode num=3 name=gate x.min=0.07 x.max=0.11 y.min=0.0 y.max=0.001

electrode num=4 name=gate2 x.min=0.07 x.max=0.11 y.min= 0.014 y.max=0.015

#

doping uniform conc =1E20 n.type region = 2

doping uniform conc =1E17 n.type region = 4

doping uniform conc =1E14 p.type region = 3

#

save outf=abc.str

tonyplot abc.str

#

material material = silicon 

#

model conmob srh fldmob bgn fermi print

#

method newton trap maxtrap=5

#

contact name=gate workfun=4.8

contact name=gate2 workfun=4.8 common = gate

contact name=source

contact name=drain

#

solve init

solve prev

solve vdrain = 0.1

solve vdrain = 0.2

solve vdrain = 0.3

solve vdrain = 0.6

solve vdrain = 1.0

solve vdrain = $vdrain

log outf=dgft.log

solve vgate=0 vstep=0.02 vfinal=2 name=gate

output band.param con.band val.band e.mobility ex.velocity ey.velocity e.velocity

tonyplot dgft.log

save outf=abc.str

tonyplot abc.str

result:-

Textured solar cell (Spectral response)

 code:---

go athena

#

line x loc=0.00 spac=0.1

line x loc=0.25 spac=0.1

line x loc=0.50 spac=0.1

line x loc=0.75 spac=0.1

line x loc=1.0 spac=0.1

line x loc=1.25 spac=0.1

line x loc=1.5  spac=0.1

line x loc=1.75  spac=0.1

line x loc=2.0  spac=0.1

line x loc=2.125  spac=0.1

#

line y loc=0.00 spac=0.1

line y loc=4.00 spac=0.1

line y loc=8.00 spac=0.1

line y loc=12.00 spac=0.5

line y loc=20.00 spac=2.0 

line y loc=24.00 spac=2.0

# doped with phosphorous

init silicon c.phosphor=1.0e15 two.d orientation=100

#ecthing process

etch silicon start x=0 y=0

etch cont x=0.25 y=0

etch cont x=0.5 y=4

etch cont x=0.75 y=4

etch cont x=1 y=0

etch cont x=1.25 y=0

etch cont x=1.5 y=4

etch cont x=1.75 y=4

etch done x=2.0 y=0

struct mirror right

save outf=abc.str

tonyplot abc.str

go atlas

mesh infile=abc.str

electrode num=1 name=anode x.min=0.0 x.max=.25 top mat=silver

electrode num=2 name=anode x.min=1 x.max=1.25 top mat=silver

electrode num=3 name=anode x.min=2 x.max=2.25 top mat=silver

electrode num=4 name=anode x.min=3 x.max=3.25 top mat=silver

electrode num=5 name=anode x.min=4 x.max=4.25 top mat=silver

electrode num=6 name=cathode y.min=24 y.max=24  mat=silver

material material=silicon mun0=1000 mup0=500 eg300=2.0 taun0=1e-6 taup0=1e-6 sopra=Si100_2.nk

beam num=1 am1.5g x.origin=0 y.origin=-1.0 angle=90 wavel.start=0.4 wavel.end=1 wavel.num=100 

mat taun0=1e-6 taup0=1e-6

output val.band con.band opt.int

models conmob fldmob srh auger print

method  newton autonr trap

contact name=anode workfun=5.1

contact name=cathode 

solve init

solve b1=0.001

solve b1=0.01

solve b1=0.1

solve b1=1

log outf=iv.log

solve b1=1 lambda=0.3 wstep=0.01 wfinal=1.0 

log off

tonyplot  iv.log

extract init infile="iv.log"

extract name="EQE2" curve(elect."optical wavelength",-(i."anode")/elect."source photo current"*elect."Absorption") outf="EQE01_1.dat" 

tonyplot EQE01_1.dat

save outf=abc.str

tonyplot abc.str

result:---