DG-MOSFET

 code:-

go atlas

set mat=sio2

set vdrain=1.0

mesh space.mult=1.0

#

x.m l=0.00   s=0.5

x.m l=0.07   s=0.001

x.m l=0.075  s=0.0005

x.m l=0.1    s=0.0005

x.m l=0.11   s=0.001

x.m l=0.175  s=0.5

#

y.m l= 0.0    s=.005

y.m l= 0.001  s=0.001

y.m l= 0.0025 s=0.0005

y.m l= 0.0125 s=0.0005

y.m l= 0.014  s=0.001

y.m l= 0.015  s=.005

#

region num=1 x.min=0 y.min =0 mat= air

region num=2 x.min=0.0 x.max=0.075 y.min=0.0025 y.max=0.0125 mat = silicon

region num=3 x.min=0.075 x.max=0.1 y.min=0.0025 y.max=0.0125 mat = silicon

region num=4 x.min=0.1 x.max=0.175 y.min=0.0025 y.max=0.0125 mat = silicon

region num=5 x.min=0.07 x.max=0.11 y.min= 0.001 y.max=0.0025 mat = $mat

region num=6 x.min=0.07 x.max=0.11 y.min= 0.0125 y.max=0.014 mat = $mat

#

electrode num=1 name= source x.min = 0 x.max=0 y.min=0.0025 y.max=0.0125

electrode num=2 name= drain x.min=0.175 x.max=0.175 y.min=0.0025 y.max=0.0125

electrode num=3 name=gate x.min=0.07 x.max=0.11 y.min=0.0 y.max=0.001

electrode num=4 name=gate2 x.min=0.07 x.max=0.11 y.min= 0.014 y.max=0.015

#

doping uniform conc =1E20 n.type region = 2

doping uniform conc =1E17 n.type region = 4

doping uniform conc =1E14 p.type region = 3

#

save outf=abc.str

tonyplot abc.str

#

material material = silicon 

#

model conmob srh fldmob bgn fermi print

#

method newton trap maxtrap=5

#

contact name=gate workfun=4.8

contact name=gate2 workfun=4.8 common = gate

contact name=source

contact name=drain

#

solve init

solve prev

solve vdrain = 0.1

solve vdrain = 0.2

solve vdrain = 0.3

solve vdrain = 0.6

solve vdrain = 1.0

solve vdrain = $vdrain

log outf=dgft.log

solve vgate=0 vstep=0.02 vfinal=2 name=gate

output band.param con.band val.band e.mobility ex.velocity ey.velocity e.velocity

tonyplot dgft.log

save outf=abc.str

tonyplot abc.str

result:-