(updated) GFET(graphene field effect transistor)-1

code:-

go atlas

mesh space.mult=1

x.mesh loc=0 spac=.5

x.mesh loc=0.2 spac=.5

x.mesh loc=0.6 spac=.5

x.mesh loc=0.9 spac=.5

x.mesh loc=1.3 spac=.5

x.mesh loc=1.5 spac=.5

#

y.mesh loc=0 spac=.05

y.mesh loc=0.05 spac=.005

y.mesh loc=0.055 spac=.0005

y.mesh loc=0.40 spac=.05

y.mesh loc=0.45 spac=.5

qtx.mesh loc=0.0 spac=0.5

qtx.mesh loc=1.5 spac=0.5

qty.mesh loc=0.01 spac=0.005

qty.mesh loc=0.05 spac=0.0005

qty.mesh loc=0.055 spac=0.0005

qty.mesh loc=0.1 spac=0.005

#here i have used polysilicon material having property of graphene

region num=1 material=polysilicon x.min=0 x.max=1.5 y.min=.05 y.max=.055

region num=2 material=silicon x.min=0 x.max=1.5 y.min=.4 y.max=.45

region num=3 material=SiO2 x.min=0 x.max=1.5 y.min=0 y.max=.05

region num=4 material=SiO2 x.min=0 x.max=1.5 y.min=.055 y.max=.4

#

electrode name=gate x.min=.6 x.max=.9 y.min=0 y.max=.05 mat=aluminium

electrode name=source x.min=0 x.max=.2 y.min=0 y.max=.05 mat=aluminium

electrode name=drain x.min=1.3 x.max=1.5 y.min=0 y.max=.05 mat=aluminium

#

doping uniform conc=1e15 p.type reg=2

doping uniform conc=1e20 n.type x.min=0 x.max=.3 y.min=.05 y.max=.1

doping uniform conc=1e20 n.type x.min=1.2 x.max=1.5 y.min=.05 y.max=.1

MATERIAL MATERIAL=silicon me.tunnel=.44 mh.tunnel=.52 NC300=1e15 NV300=1e15

material material=polysilicon EG300= 0.026 NC300=3e17 NV0300=3e17 nsrhn=0 taun=0 taup=0 nsrhp=0 ksrhtn=0 ksrhtp=0 mun=15000 mup=12000 PERMITTIVITY=25 \

tc.cons=0.12 vsat=1e8

#contact

contact name=gate workfun=4.6

contact name=drain

contact name=source

#model

models bbt.nonlocal bbt.forward bgn arora srh conmob fldmob CVT print

#

output val.band con.band qfn qfp e.field j.electron j.hole j.conduction j.total band.par

#method

method newton autonr trap maxtrap=10

#solve

solve init

solve vdrain=0.2

log outf=gfet.log

save outf=gfet.str

solve freq=1e6 name=gate vgate=-4 vstep=+0.1 vfinal=4

tonyplot gfet.log

tonyplot gfet.str

result:-