DGMOSFET(double gate MOSFET)

go atlas

mesh space.mult=1.0

#

x.m l=0.00 s=0.05

x.m l=0.001 s=0.001

x.m l=0.003 s=0.0005

x.m l=0.013 s=0.0005

x.m l=0.015 s=0.001

x.m l=0.016 s=0.05

#

y.m l= 0.0 s=.005

y.m l= 0.001 s=0.0005

y.m l= 0.003 s=0.00005

y.m l= 0.007 s=0.00005

y.m l= 0.009 s=0.0005

y.m l= 0.010 s=.005

#

region num=1 x.min=0 y.min =0 mat= air

region num=2 x.min=0.0 x.max=0.003 y.min= 0.003 y.max=0.007 mat = silicon

region num=3 x.min=0.003 x.max=0.013 y.min= 0.003 y.max=0.007 mat = silicon

region num=4 x.min=0.013 x.max=0.016 y.min= 0.003 y.max=0.007 mat = silicon

region num=5 x.min=0.003 x.max=0.013 y.min= 0.001 y.max=0.003 mat = sio2

region num=6 x.min=0.003 x.max=0.013 y.min= 0.007 y.max=0.009 mat = sio2

#

electrode num=1 name= source x.min = 0 x.max=0 y.min=0.003 y.max=0.007

electrode num=2 name= drain x.min = 0.013 x.max=0.013 y.min=0.003 y.max=0.007

electrode num=3 name=gate x.min=0.003 x.max=0.013 y.min=0.0 y.max=0.001

electrode num=4 name=gate2 x.min=0.003 x.max=0.013 y.min= 0.009 y.max=0.010

#

doping uniform conc =2E20 n.type region = 2

doping uniform conc =2E20 n.type region = 4

doping uniform conc =1E18 p.type region = 3

#

#material material = sio2

material material = silicon EG300=1.08 NC300=2.8e19 NV300=1.04e19 PERMITTIVITY=11.8 MUN=2360 AFFINITY=4.284

#

model conmob srh fldmob bgn fermi print

#

method newton trap maxtrap=5

#

contact name = gate workfun = 4.6

contact name = gate2 workfun = 4.6 common = gate

contact name = source

contact name = drain

#

solve init

solve prev

solve vgate = 0.1

solve vgate = 0.2

solve vgate = 0.3

solve vgate = 0.6

solve vgate = 0.8

log outf = dgft.log

solve vdrain = 0 vstep = 0.01 vfinal = 0.7 name = drain

output band.param con.band val.band e.mobility ex.velocity ey.velocity e.velocity

tonyplot dgft.log

save outf=abc.str

tonyplot abc.str

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result:-------------------------