silvaco tcad:
go atlas
#
mesh auto
x.m l=0.00 s=0.1
x.m l=0.8 s=0.05
x.m l=1.3 s=0.1
x.m l=1.8 s=0.05
x.m l=2.6 s=0.1
#
y.m l=-0.004888 s=0.001
y.m l=0.0 s=0.001
y.m l=0.1 s=0.025
y.m l=1 s=0.2
#
region num=1 y.min=0 y.max=1 silicon
region num=2 y.max=0 material=HfO2
electrode name=gate x.min=0.6 x.max=2.0 y.max=-0.004888
electrode name=source x.max=0.5 y.min=0 y.max=0
electrode name=drain x.min=2.1 y.min=0 y.max=0
electrode substrate
doping uniform conc=4e15 p.type
doping gauss n.type conc=1e20 char=0.075 lat.char=0.05 reg=1 x.r=0.6
doping gauss n.type conc=1e20 char=0.075 lat.char=0.05 reg=1 x.l=2
#
#
contact name=gate aluminum
#
mobility rps.n rps.p mun0=5000
#
method newton trap carriers=2
#
solve init
solve vdrain=0.1
#
save outf=high.str
probe name=Eperp x=1.3 y=0.0001 dir=90 field
probe name=charge x.min=1.1 x.max=1.5 n.conc integrate y.min=0 y.max=0.2
#
log outf=highk.log
solve vstep=0.01 name=gate vfinal=2.0
#
tonyplot highk.log
tonyplot high.str
#
quit
result:-
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